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Electric-field-controlled memory effect in heterostructures for gas sensors

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Abstract

A capacitive gas sensor has been created on the basis of an n-SnO2/SiO2/p-Si heterostructure with two successive oxide layers. The presence of polar C2H5OH, NH3, and H2O gas molecules in air leads to a significant increase in the capacitance of the structure at room temperature. An important feature of the adsorption process is a memory effect, which is confined to the possibility of maintaining the capacitance value after removal of the active component from the gas mixture. The possibility of quenching the accumulated useful signal by electric-field pulses has been realized for the first time as applied to gas sensors.

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Authors and Affiliations

  1. M. V. Lomonosov Moscow State University, Moscow

    R. B. Vasil’ev, M. N. Rumyantseva, L. I. Ryabova, B. A. Akimov, A. M. Gas’kov, M. Labeau & M. Langlet

  2. Institut National Polytechnique de Grenoble, St Martin d’Hères, France

    R. B. Vasil’ev, M. N. Rumyantseva, L. I. Ryabova, B. A. Akimov, A. M. Gas’kov, M. Labeau & M. Langlet

Authors
  1. R. B. Vasil’ev
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  2. M. N. Rumyantseva
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  3. L. I. Ryabova
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  4. B. A. Akimov
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  5. A. M. Gas’kov
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  6. M. Labeau
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  7. M. Langlet
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Additional information

Pis’ma Zh. Tekh. Fiz. 25, 22–29 (June 26, 1999)

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Vasil’ev, R.B., Rumyantseva, M.N., Ryabova, L.I. et al. Electric-field-controlled memory effect in heterostructures for gas sensors. Tech. Phys. Lett. 25, 471–474 (1999). https://doi.org/10.1134/1.1262531

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  • DOI: https://doi.org/10.1134/1.1262531

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