Abstract
The characteristic features of temperature quenching of the intensity of the edge luminescence bands of n-ZnSe crystals annealed in different media (vacuum, Zn, Se) are investigated a wide temperature range. A change in the mechanisms of high-temperature exciton luminescence in the short-wavelength region of the spectrum (443 nm) with increase in temperature of the crystal is observed. It is shown that the nature of temperature quenching of the long-wavelength edge luminescence band (458 nm) is evidence of dissociation of associative luminescence centers with increase in the sample temperature.
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Fiz. Tekh. Poluprovodn. 32, 178–181 (February 1998)
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Ivanova, G.N., Kasiyan, V.A., Nedeoglo, N.D. et al. The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence. Semiconductors 32, 160–163 (1998). https://doi.org/10.1134/1.1187338
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DOI: https://doi.org/10.1134/1.1187338