Study of Linear Light Edge-Emitting Diodes Based on InP/InGaAsP/InP Heterostructure with the Crescent Active Region
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Buried light edge-emitting diodes (LEDs) with a wide emission spectrum in the wavelength range of 1380–1420 nm were developed. The design of an edge LED with a channel in a substrate and with the crescent active region and blocking layers of InP/GaInAsP/p-n-p-n/ZnSe was presented. Coupling of LED with an optical single-mode fiber and a microlens on the end of an optical fiber was performed. The characteristics of LEDs based on mesa-stripe heterostructures InP/GaInAsP were investigated. The dependences of the output power and the LED emission spectra based on mesa-stripe heterostructures InP/InGaAsP/InP with the crescent active region and p-n-p-n/ZnSe structure blocking the leakage current on the stabilization temperature of the active element and the injection current were studied. The dependence of the output parameters on the emitter stabilization temperature was demonstrated, which enables the creation of devices based on such LEDs both with and without forced cooling. The opportunity to develop buried LEDs with the crescent active region and a low degree of emission spectrum modulation was shown. The possibility of the entry of up to 45% of the LED radiation into a single-mode optical fiber using microlenses produced by chemical etching and fusion of a fiber end in a high-voltage arc of a welding machine was demonstrated.
Keywordssemiconductor heterostructures planar structures optoelectronics light-emitting diodes
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