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Inorganic Materials: Applied Research

, Volume 9, Issue 5, pp 848–854 | Cite as

Combined Action of Fast Neutrons and Operational Factors on Reliability of Infrared LEDs

  • A. V. Gradoboev
  • A. V. Simonova
  • K. N. Orlova
Materials of Power Engineering And Radiation-Resistant Materials
  • 7 Downloads

Abstract

Light-emitting diodes (LEDs) operate under conditions of ionizing irradiation. The purpose of this work is to research the action of preliminary irradiation with fast neutrons on the reliability of LEDs. The objects of research are LEDs based on double AlGaAs heterostructures. The control of the forward-bias region of the current–voltage characteristic of the LED allows detecting the parallel-connected dislocations to the p–n junction of the LED. Moreover, it makes possible to determine the resistance of ohmic contacts. The LEDs have an s-shaped form of the current–voltage characteristic, which is due to the connection of dislocations parallel to the p–n junction of its active layer. Long-term operating conditions are simulated by accelerated step-by-step tests. Analysis of the current–voltage characteristic shape makes it possible to mark several distinctive areas that are defined by the electron injection level in the active region of the LED. The marked areas can be characterized by corresponding threshold currents. The threshold currents go up when the step number increase is accompanied by an increase in resistance of ohmic contacts during step-by-step tests and under irradiation with fast neutrons. Preliminary irradiation with fast neutrons leads to a shift in the threshold currents depending on the fluence of fast neutrons. Preliminary irradiation with fast neutrons with fluence in the region of radiation-stimulated reconstruction of the initial defect structure makes it possible to increase the resistance of ohmic contacts during operation and, therefore, to increase their reliability. Preliminary irradiation with fast neutrons in the region of only radiation defects leads to the accelerated increase in resistance of ohmic contacts during operation, which decreases their reliability. Preliminary irradiation with fast neutrons can be used in the manufacturing technology of LEDs with the purpose of increasing the reliability.

Keywords

light-emitting diode AlGaAs neutrons preliminary irradiation reliability 

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References

  1. 1.
    Gradoboev, A.V. and Surzhikov, A.P., Radiatsionnaya stoikost’ SVCH priborov na osnove arsenida galliya (Radiation Resistance of Microwave Devices Based on Gallium Arsenide), Tomsk: Tomsk. Politekh. Univ., 2005.Google Scholar
  2. 2.
    Anderson, W.T., Harrison, R.C., Gerdes, J., Beall, J.M., and Roussos, J.A., Combined pulsed neutron and flash x-ray radiation effects in GaAs MMICs, 10th Annual IEEE (GaAs IC) Symp. “Gallium Arsenide Integrated Circuit,” Technical Digest 1988, Piscataway: Inst. Electr. Electron. Eng., 1988, pp. 53–56.Google Scholar
  3. 3.
    Martin, D.I., Ighigeanu, D.I., Mateescu, E.N., Craciun, G.D., Calinescu, I.I., Iovu, H.M., and Marin, G.G., Combined microwave and accelerated electron beam irradiation facilities for applied physics and chemistry, IEEE Trans. Ind. Appl., 2004, vol. 40, no. 1, pp. 41–52.CrossRefGoogle Scholar
  4. 4.
    Li, X., Liu, C., Yang, J., and Ma, G., Research on the combined effects of ionization and displacement defects in NPN transistors based on deep level transient spectroscopy, IEEE Trans. Nucl. Sci., 2015, vol. 62, no. 2, pp. 555–564.CrossRefGoogle Scholar
  5. 5.
    Vigneshwara Raja, P. and Narasimha Murty, N.V.L., D–T neutron and 60Co-gamma irradiation effects on HPSI 4H–SiC photoconductors, IEEE Trans. Nucl. Sci., 2018, vol. 65, no. 1, pp. 558–565.CrossRefGoogle Scholar
  6. 6.
    Schenkelaars, D. and van Driel, W.D., Highly-accelerated testing for LED modules, drivers, and systems, in Solid State Lighting Reliability, Solid State Lighting Technology and Application Series, van Driel W. and Fan X., Eds., New York: Springer-Verlag, 2013, vol. 1, pp. 231–242.Google Scholar
  7. 7.
    Wilcoxon, R. and Petroski, J., LEDs in harsh environments, in Thermal Management for LED Applications, Solid State Lighting Technology and Application Series, Lasance, C. and Poppe, A., Eds., New York: Springer-Verlag, 2014, vol. 2, pp. 499–518.CrossRefGoogle Scholar
  8. 8.
    Fukuda, M., Reliability testing of semiconductor optical devices, in Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, New York: Springer-Verlag, 2013, pp. 3–17.Google Scholar
  9. 9.
    Khattab, K., Haddad, K., and Haj-Hassan, H.J., Design of a permanent Cd-shielded epithermal neutron irradiation site in the Syrian miniature neutron source reactor, J. Radioanal. Nucl. Chem., 2008, vol. 277, no. 2, pp. 311–316.CrossRefGoogle Scholar
  10. 10.
    Anashin, V.S., Ishutin, I.O., Ulimov, V.N., and Emel’yanov, V.V., Control of the hardness of special VLSI to space natural ionizing radiation, IV Vserossiiskaya nauchno-tekhnicheskaya konferentsiya “Problemy razrabotki perspektivnykh mikro-i nanoelektronnykh sistem” (Proc. IV All-Russ. Sci.-Tech. Conf. “Development of Prospective Micro-and Nanoelectronic Systems”), Moscow: Inst. Probl. Proekt. Mikroelektron., Ross. Akad. Nauk, 2010, pp. 233–236.Google Scholar
  11. 11.
    Figurov, V.S., Bondar’, V.A., Nenadyshin, N.N., Sushko, M.V., and Kazakov, V.V., Evaluation of the reproducibility of the radiation characteristics of the BARS-4 installation, Vopr. At. Nauki Tekh., Ser.: Fiz. Radiats. Vozdeistv. Radioelektron. Appar., 2005, nos. 3–4, pp. 68–71.Google Scholar
  12. 12.
    Gradoboev, A.V., Asanov, I.A., and Salchak, Ya.A., Effect of radiation exposure by fast neutron influence on reliability of infrared light emitting diodes, Izv. Vyssh. Uchebn. Zaved., Fiz., 2013, vol. 56, no. 11–3, pp. 111–115.Google Scholar
  13. 13.
    Gradoboev, A.V., Orlova, K.N., Asanov, I.A., and Simonova, A.V., The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability, Microelectron. Reliabil., 2016, vol. 65, pp. 55–59.CrossRefGoogle Scholar
  14. 14.
    Gradoboev, A.V. and Orlova, K.N., Radiation model light emitting diodes based on AlGaInP heterostructures with multiple quantum wells, Adv. Mater. Res., 2014, vol. 880, pp. 237–241.CrossRefGoogle Scholar
  15. 15.
    Lampert, M.A. and Mark, P., Current Injection in Solids, New York: Academic, 1970; Moscow: Mir, 1973.Google Scholar
  16. 16.
    Gradoboev, A.V., Simonova, A.V., and Orlova, K.N., Influence of irradiation by 60Co gamma-quanta on reliability of IR-LEDs based upon AlGaAs heterostructures, Phys. Status Solidi C, 2016, vol. 13, nos. 10–12, pp. 895–902.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. V. Gradoboev
    • 1
  • A. V. Simonova
    • 1
  • K. N. Orlova
    • 1
  1. 1.National Research Tomsk Polytechnic UniversityTomskRussia

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