Advertisement

Glass Physics and Chemistry

, Volume 44, Issue 5, pp 398–401 | Cite as

Hopping Mechanism of Charge Transfer in the Thin Layers of a Ge28.5Рb15S56.5 Vitreous System

  • R. A. Kastro
  • S. D. Khanin
  • N. I. Anisimova
  • G. I. Grabko
Article
  • 8 Downloads

Abstract

The results of the study of the charge transfer processes in the thin layers of a Ge28.5Рb15S56.5 vitreous system are presented. The power-law dependence of the conductivity on frequency and a decrease in the value of the exponent s with increasing temperature are found. The charge transfer is a thermally activated process and two areas on the temperature dependence of conductivity are present. The activation energies of these areas are Е1 = 0.20 ± 0.01 and Е2 = 0.50 ± 0.01 eV, respectively. The obtained results are explained within the scope of the correlated barrier hopping (CBH) model of the hopping conductivity in disordered systems. The main microparameters of the system, namely, the density of the localized state (N), hopping length (Rω), and the maximal value of the height of the potential barrier (WM), are calculated.

Keywords

hopping transfer mechanism thin layers vitreous system 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Cha, D., Kim, H., Hwang, Y., Jeong, J., and Kim, J., Fabrication of molded chalcogenide-glass lens for thermal imaging applications, Appl. Opt., 2012, vol. 51, no. 23, pp. 5649–5656.CrossRefGoogle Scholar
  2. 2.
    Snopatin, G.E., Shiryaev, V.S., Plotnichenko, V.G., Dianov, E.M., and Churbanov, M.F., High purity chalcogenide glasses for fiber optics, Inorg. Mater., 2009, vol. 45, no. 13, p. 1439.CrossRefGoogle Scholar
  3. 3.
    Charrier, J., Brandily, M.L., Lhermite, H., Michel, K., Bureau, B., Verger, F., and Nazabal, V., Evanescent wave optical micro-sensor based on chalcogenide glass, Sens. Actuators, B, 2012, vol. 173, pp. 468–476.CrossRefGoogle Scholar
  4. 4.
    Zhang, B., Guo, W., Yu, Y., Zhai, C., Qi, S., Yang, A., Li, L., Yang, Z., Wang, R., Tang, D., Tao, G., and Luther-Davies, B., Low loss, high NA chalcogenide glass fibers for broadband midinfrared supercontinuum generation, J. Am.Ceram. Soc., 2015, vol. 98, no. 5, pp. 1389–1392.CrossRefGoogle Scholar
  5. 5.
    Tagiev, B.G., Kasumov, U.F., Musaeva, N.N., and Dzhabbarov, R.B., Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca4Ga2S7: Eu3+ single crystals, Phys. Solid State, 2003, vol. 45, no. 3, pp. 426–432.CrossRefGoogle Scholar
  6. 6.
    Anisimova, N.I., Bordovsky, V.A., Grabko, G.I., and Castro, R.A., Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide, Semiconductors, 2010, vol. 44, no. 8, pp. 1004–1007.CrossRefGoogle Scholar
  7. 7.
    Castro, R.A., Kononov, A.A., Dao, T.H., and Dolginsev, D.M., Dielectric and structural study of polymer composites based on polyethylene and barium titanate, AIP Conf. Proc., 2017, vol. 1859, no. 1, p. 020002.CrossRefGoogle Scholar
  8. 8.
    Bordovsky, G.A. and Izvozchikov, V.A., Estestvennoneuporyadochennyi poluprovodnikovyi kristall (Naturally Disordered Semiconductor Crystal), St. Petersburg: Obrazovanie, 1997.Google Scholar
  9. 9.
    Bordovsky, G.A., Bordovsky, V.A., Anisimova, N.I., and Castro, R.A., The spectroscopy of localized states in glassy films Ge28.5Pb15S56.5, in Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, June 1–5, 2003, Nagoya, Japan: 2003, pp. 800–802.Google Scholar
  10. 10.
    Bordovsky, G.A., Kazakova, L.P., Levedev, E.A., Lyubin, V.M., and Savinova, N.A., Ge-Pb-S vitreous semiconductors with bipolar photoconductivity, J. Non-Cryst. Solids, 1984, vol. 63, no. 3, pp. 415–418.CrossRefGoogle Scholar
  11. 11.
    Castro, R.A., Bordovsky, V.A., Anisimova, N.I., and Grabko, G.I., Spectra of charged defects in glassy Ge0.285Pb0.15S0.565 thin layers, Semiconductors, 2009, vol. 43, no. 3, pp. 365–367.CrossRefGoogle Scholar
  12. 12.
    Anisimova, N.I., Bordovsky, V.A., Grabko, G.I., and Castro, R.A., Specific features of the photodielectric effect in amorphous As2Se3 layers, Tech. Phys. Lett., 2013, vol. 39, no. 1, pp. 98–100.CrossRefGoogle Scholar
  13. 13.
    Anisimova, N.I., Bordovsky, V.A., Grabko, G.I., and Castro, R.A., Ultralow-frequency photoelectric response of amorphous As2Se3 layers, Semiconductors, 2013, vol. 47, no. 7, pp. 90–94.CrossRefGoogle Scholar
  14. 14.
    Mohammed, M.I., Abd-rabo, A.S., and Mahmoud, E.A.A.C., Conductivity and dielectric behaviour of chalcogenide GexFexSe100–2x thin films, Egypt. J. Solids, 2002, vol. 25, no. 1, pp. 49–56.Google Scholar
  15. 15.
    Bletskan, D.I. and Kabatsii, V.M., Photoelectric properties of crystalline and glassy PbGeS3, Open J. Inorgan. Non-Met. Mater., 2013, no. 3, pp. 29–36.CrossRefGoogle Scholar
  16. 16.
    Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1979, p.589.Google Scholar
  17. 17.
    Elliot, S.R., A.c. conduction in amorphous chalcogenide and pnictide semiconductors, Adv. Phys., 1987, vol. 36, no. 2, pp. 135–217.CrossRefGoogle Scholar
  18. 18.
    Austin, I.G. and Mott, N.F., Polarons in crystalline and non-crystalline materials, Adv. Phys., 1969, vol. 18, no. 71, pp. 41–102.CrossRefGoogle Scholar
  19. 19.
    Afifi, M.A., Hegab, N.A., and Bekheat, A.E., Effect of annealing on the electrical properties of In2Se3 thin films, Vacuum, 1995, vol. 46, no. 4, pp. 335–339.CrossRefGoogle Scholar
  20. 20.
    Bordovsky, G., Bordovsky, V., Anisimova, N., Castro, R., and Seldjaev, V., The spectroscopy of local states in thin films of Ge-Pb-S system, in Proceedings of the 2nd International Materials Symposium Materials-2003, 2003, p.59.Google Scholar
  21. 21.
    Bordovskii, G.A. and Castro, R.A., The state of iron and tin atoms in the Ge28.5Pb15S56.5 and Ge27Pb17Se56 vitreous semiconductors, Glass Phys. Chem., 2006, vol. 32, no. 3, pp. 315–319.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • R. A. Kastro
    • 1
  • S. D. Khanin
    • 1
    • 2
  • N. I. Anisimova
    • 1
  • G. I. Grabko
    • 3
  1. 1.Herzen State Pedagogical University of RussiaSt. PetersburgRussia
  2. 2.Budyonny Military Academy of CommunicationsSt. PetersburgRussia
  3. 3.Transbaikal State UniversityChitaRussia

Personalised recommendations