Hopping Mechanism of Charge Transfer in the Thin Layers of a Ge28.5Рb15S56.5 Vitreous System
- 14 Downloads
The results of the study of the charge transfer processes in the thin layers of a Ge28.5Рb15S56.5 vitreous system are presented. The power-law dependence of the conductivity on frequency and a decrease in the value of the exponent s with increasing temperature are found. The charge transfer is a thermally activated process and two areas on the temperature dependence of conductivity are present. The activation energies of these areas are Е1 = 0.20 ± 0.01 and Е2 = 0.50 ± 0.01 eV, respectively. The obtained results are explained within the scope of the correlated barrier hopping (CBH) model of the hopping conductivity in disordered systems. The main microparameters of the system, namely, the density of the localized state (N), hopping length (Rω), and the maximal value of the height of the potential barrier (WM), are calculated.
Keywordshopping transfer mechanism thin layers vitreous system
Unable to display preview. Download preview PDF.
- 4.Zhang, B., Guo, W., Yu, Y., Zhai, C., Qi, S., Yang, A., Li, L., Yang, Z., Wang, R., Tang, D., Tao, G., and Luther-Davies, B., Low loss, high NA chalcogenide glass fibers for broadband midinfrared supercontinuum generation, J. Am.Ceram. Soc., 2015, vol. 98, no. 5, pp. 1389–1392.CrossRefGoogle Scholar
- 8.Bordovsky, G.A. and Izvozchikov, V.A., Estestvennoneuporyadochennyi poluprovodnikovyi kristall (Naturally Disordered Semiconductor Crystal), St. Petersburg: Obrazovanie, 1997.Google Scholar
- 9.Bordovsky, G.A., Bordovsky, V.A., Anisimova, N.I., and Castro, R.A., The spectroscopy of localized states in glassy films Ge28.5Pb15S56.5, in Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, June 1–5, 2003, Nagoya, Japan: 2003, pp. 800–802.Google Scholar
- 14.Mohammed, M.I., Abd-rabo, A.S., and Mahmoud, E.A.A.C., Conductivity and dielectric behaviour of chalcogenide GexFexSe100–2x thin films, Egypt. J. Solids, 2002, vol. 25, no. 1, pp. 49–56.Google Scholar
- 16.Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1979, p.589.Google Scholar
- 20.Bordovsky, G., Bordovsky, V., Anisimova, N., Castro, R., and Seldjaev, V., The spectroscopy of local states in thin films of Ge-Pb-S system, in Proceedings of the 2nd International Materials Symposium Materials-2003, 2003, p.59.Google Scholar