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Features of Tunneling Current in Superlattices with Electrical Domains

  • S. K. PaprotskiyEmail author
  • I. V. Altukhov
  • M. S. Kagan
  • N. A. Khval’kovskiy
  • I. A. Kohn
  • N. D. Il’inskaya
  • A. A. Usikova
  • A. N. Baranov
  • R. Teissier
NANOELECTRONICS
  • 22 Downloads

Abstract—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristics, almost equidistant in voltage, and current hysteresis during direct and reverse voltage sweeps were found. An explanation is proposed relating the origin of these maxima to tunnel transitions between quantum wells in a triangular domain, assisted by the emission of optical phonons, and hysteresis with a transition between modes with a moving and static domain. The large asymmetry of the transition times between domain modes was found.

Notes

FUNDING

The work was performed as part of a state assignment with partial support from the Russian Foundation for Basic Research (grants No. 16-29-09626 and 16-29-03135) and the RAS program “Nanostructures: physics, chemistry, biology, basic technologies.”

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Copyright information

© Pleiades Publishing, Inc. 2019

Authors and Affiliations

  • S. K. Paprotskiy
    • 1
    Email author
  • I. V. Altukhov
    • 1
  • M. S. Kagan
    • 1
  • N. A. Khval’kovskiy
    • 1
  • I. A. Kohn
    • 1
  • N. D. Il’inskaya
    • 2
  • A. A. Usikova
    • 2
  • A. N. Baranov
    • 3
  • R. Teissier
    • 3
  1. 1.Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of SciencesMoscowRussia
  2. 2.Ioffe Physical-Technical Institute, Russian Academy of SciencesSt. PetersburgRussia
  3. 3.Institute of Electronics and Systems, University of MontpellierMontpellierFrance

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