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Terahertz Emission from a Monolayer Tungsten Diselenide Surface

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Abstract

Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe2) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal amplitude on azimuthal angle in a 2D WSe2 film has been studied. The distribution of the electric field of laser pumping in the WSe2/SiO2/Si structure has been calculated as dependent on the thickness of silicon dioxide layer. The choice of optimum structure geometry for effective generation of THz radiation by a WSe2 monolayer is theoretically substantiated.

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Correspondence to A. V. Gorbatova.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Gorbatova, A.V., Khusyainov, D.I. & Buryakov, A.M. Terahertz Emission from a Monolayer Tungsten Diselenide Surface. Tech. Phys. Lett. 45, 1262–1265 (2019) doi:10.1134/S1063785019120204

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Keywords:

  • two-dimensional semiconductors
  • transition metal dichalcogenides
  • tungsten diselenide
  • WSe2
  • terahertz emission
  • optical rectification.