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Technical Physics Letters

, Volume 45, Issue 10, pp 1020–1023 | Cite as

Localization of Upper-Valley Electrons in a Narrow-Bandgap Channel: a Possible Additional Mechanism of Current Increase in DA–DpHEMT

  • A. B. PashkovskiiEmail author
  • S. A. Bogdanov
Article
  • 2 Downloads

Abstract

The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in AlxGa1 –xAs–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that the fraction of electrons passing in this case from the narrow-bandgap channel to wide-bandgap material is smaller than in the usual structures, which can lead in some cases to an increase in the electron drift velocity by up to 15%. This phenomenon can provide an additional mechanism of current increase in transistors based on heterostructures with donor–acceptor doping.

Keywords:

donor–acceptor doping upper valleys narrow-bandgap channel drift velocity burst. 

Notes

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.ISTOK Research and Production CorporationFryazinoRussia

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