Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots
- 8 Downloads
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.
Keywords:semiconductor laser microlaser quantum dots current–voltage characteristic.
The study was supported by the Russian Foundation for Basic Research (project no. 16-29-03127-OFI-M) and Ministry of Science and Higher Education of the Russian Federation (3.9787.2017/8.9).
CONFLICT OF INTEREST
The authors declare that they have no conflict of interest.
- 3.L. A. Coldren, S. W. Corzine, and M. L. Masanovic, Diode Lasers and Photonic Integrated Circuit, 2nd ed. (Wiley, Hoboken, NJ, 2012), Sect. 4.5.2.Google Scholar
- 4.E. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, M. S. Mikhailovskii, A. N. Abramov, M. V. Maximov, M. M. Kulagina, Yu. A. Guseva, D. A. Livshits, and A. E. Zhukov, Semiconductors (2019, in press).Google Scholar