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Technical Physics Letters

, Volume 45, Issue 10, pp 959–962 | Cite as

Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep pn-Junction

  • M. K. BakhadyrkhanovEmail author
  • S. B. Isamov
  • Z. T. Kenzhaev
  • S. V. Koveshnikov
Article
  • 4 Downloads

Abstract

It has been shown that the doping of the front side of a solar cell with a deep-level pn junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.

Keywords:

photocell silicon nickel doping thermal annealing clusters collection coefficient lifetime. 

Notes

FUNDING

This work was performed within the framework of project no. OT-F2-50 “Development of Scientific Foundations for the Formation of AIIBVI and AIIIBV Unit Cells in a Silicon Lattice—a New Approach in the Synthesis of Promising Materials for Photoenergetics and Photonics.”

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • M. K. Bakhadyrkhanov
    • 1
    Email author
  • S. B. Isamov
    • 1
  • Z. T. Kenzhaev
    • 2
  • S. V. Koveshnikov
    • 1
  1. 1.Tashkent State Technical UniversityTashkentUzbekistan
  2. 2.Karakalpak State UniversityNukusUzbekistan

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