Technical Physics Letters

, Volume 45, Issue 5, pp 481–484 | Cite as

Intraband Radiation Absorption by Free Holes in GaAs/InGaAs Quantum Wells with Allowance for Nonsphericity of the kP Hamiltonian

  • N. V. PavlovEmail author
  • G. G. Zegrya


A system of Kane’s equations has been derived and solved with allowance for elastic stresses and nonsphericity of the kP Hamiltonian. On this basis, analytic expressions for the energy spectra of charge carriers have been obtained and calculations of the optical absorption coefficient for heavy holes with transition to a spin-orbit-split hole band in GaAs/InGaAs quantum wells (QWs) have been performed for various polarization directions of the incident radiation. It is established that the maximum absorption in GaAs/InGaAs heterostructure takes place at a QW width of 4–6 nm.



  1. 1.
    P. S. Zory, Quantum Well Lasers (Academic, New York, 1993).Google Scholar
  2. 2.
    A. Ya. Shik, Sov. Tech. Phys. Lett. 15, 304 (1989).Google Scholar
  3. 3.
    N. V. Pavlov, A. G. Zegrya, G. G. Zegrya, and V. E. Bugrov, Semiconductors 52, 195 (2018).ADSCrossRefGoogle Scholar
  4. 4.
    E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).ADSCrossRefGoogle Scholar
  5. 5.
    G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Wiley, New York, 1990).Google Scholar
  6. 6.
    A. S. Polkovnikov and G. G. Zegrya, Phys. Rev. B 58, 4039 (1998).ADSCrossRefGoogle Scholar
  7. 7.
    N. V. Pavlov and G. G. Zegrya, J. Phys.: Conf. Ser. 993, 012013 (2018).Google Scholar
  8. 8.
    F. Szmulowicz, H. Haugan, and G. J. Brown, Phys. Rev. B 69, 155321 (2004).ADSCrossRefGoogle Scholar
  9. 9.
    G. F. Glinskii and M. S. Mironova, Semiconductors 48, 1324 (2014).ADSCrossRefGoogle Scholar
  10. 10.
    G. F. Glinskii, Tech. Phys. Lett. 44, 232 (2018).ADSCrossRefGoogle Scholar
  11. 11.
    G. Liu and S. L. Chuang, Phys. Rev. B 65, 165220 (2002).ADSCrossRefGoogle Scholar
  12. 12.
    G. L. Bir and G. E. Pikus, Symmetry and Strain Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).Google Scholar
  13. 13.
    M. G. Burt, J. Phys.: Condens. Matter 4, 6651 (1992).ADSGoogle Scholar
  14. 14.
    M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Ioffe Physical Technical Institute, Russian Academy of SciencesSt. PetersburgRussia

Personalised recommendations