Tunnel Мagnetoresistive Еlements for Magnetic Field Sensors
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We have developed technology for manufacturing chains of CoFe/Al2O3/NiFe tunnel magnetoresistive (TMR) elements with pinning on the IrMn antiferromagnetic layer. We have studied the dependence of the shape of magnetoresistance curves on the geometric parameters of laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of unidirectional anisotropy of the pinned CoFe layer. The chain resistance ranges from several tens of kiloohms to hundreds of megaohms depending on the thickness of the tunnel-transparent dielectric layer with a magnetoresistive effect of 10–15%. The developed technology can be used in manufacturing tunneling magnetic field sensors.
When performing the study, we used equipment of the Center for Collective Use Physics and Technology of Micro- and Nanostructures, Institute for Physics of Microstructures.
Developing the technology for manufacturing tunnel magnitoresistive structures and studying their magnetic properties was supported by the Russian Foundation for Basic Research (project no. 18-02-00247). Investigations of the transportation and magnetoelectric properties of chains of tunnel contacts was supported by the Russian Science Foundation (project 16-12-10340).
CONFLICT OF INTEREST
The authors declare no conflict of interest.