Model for Thermal Oxidation of Silicon
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Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.
This work was supported by the Federal Agency for Scientific Organizations of the Russian Federation and by Program no. 0066-2019-0004 of the Ministry of Science and Higher Education of Russia for Valiev Institute of Physics.
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