Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation
Bilayer CoSi2/Si/CoSi2/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.
- 2.A. A. Altukhov and V. V. Zhirnov, Proc. II All-Union Interdisciplinary Conf. on Thin Films in Electronics, Izhevsk, Moscow, 1991, p. 15.Google Scholar
- 7.B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzi- baeva, A. K. Tashatov, S. B. Donaev, and B. B. Mav-lyanov, Tech. Phys. 58, 1383 (2013)Google Scholar