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Technical Physics

, Volume 63, Issue 12, pp 1820–1823 | Cite as

Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

  • Y. S. ErgashovEmail author
  • B. E. Umirzakov
SOLID STATE ELECTRONICS

Abstract

Bilayer CoSi2/Si/CoSi2/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Tashkent State Technical UniversityTashkentUzbekistan

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