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Semiconductors

, Volume 53, Issue 12, pp 1646–1650 | Cite as

Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix

  • R. A. Castro
  • S. D. Khanin
  • A. P. Smirnov
  • A. A. KononovEmail author
AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS

Abstract

The results of investigating charge-transfer processes in thin layers of a vitreous system (As2Se3)100 – xBix are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E1 = 0.12 ± 0.01 eV and E2 = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states (N), the hopping length (Rω), and the largest height of the potential barrier (WM).

Keywords:

vitreous system (As2Se3)100 –xBix dielectric spectroscopy conductivity gap structures X-ray diffraction analysis 

Notes

FUNDING

This work was supported by the Ministry of Education and Science of the Russian Federation in the framework of the state task (project no. 16.2811.2017/PCh).

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • R. A. Castro
    • 1
  • S. D. Khanin
    • 1
    • 2
  • A. P. Smirnov
    • 1
  • A. A. Kononov
    • 1
    Email author
  1. 1.Herzen State Pedagogical University of RussiaSt. PetersburgRussia
  2. 2.Budyonny Military Academy of CommunicationsSt. PetersburgRussia

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