, Volume 53, Issue 15, pp 2012–2015 | Cite as

Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

  • V. I. EgorkinEmail author
  • V. E. Zemlyakov
  • A. V. Nezhentsev
  • V. A. Gudkov
  • V. I. Garmash


For silicon carbide, the problem of obtaining low-resistance ohmic contacts with improved service characteristics remains topical despite a significant body of experimental data. The influence exerted by the composition of Ni and TiAl metallization, alloying parameters, additional doping of the contact layer of silicon carbide (SiC) with N+ nitrogen ions, and the crystallographic Si- or C-face on the resistance of ohmic contacts  to n-6H-SiC  is examined.  It is  found  that the greatest influence on how ohmic contacts to n-6H-SiC are formed is exerted by the alloying process resulting in a decrease in the contact resistance by approximately six times. The process of additional doping with N+ also reduces the contact resistance by nearly a factor of four. It is found that low-resistance contacts can be obtained on both faces with approximately the same low resistance. TiAl metallization is optimal for the C-face, and Ni metallization, for the Si-face. This choice of metallization makes it possible to obtain ohmic contacts on both polar faces with approximately the same resistances on the order of 2.5 × 10–4 Ω cm2.


silicon carbide ohmic contact ion implantation 



This work was financially supported by the Ministry of Education and Science of the Russian Federation (agreement no. 14.581.21.0021, unique identifier RFMEFI58117X0021).


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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. I. Egorkin
    • 1
    Email author
  • V. E. Zemlyakov
    • 1
  • A. V. Nezhentsev
    • 1
  • V. A. Gudkov
    • 2
  • V. I. Garmash
    • 1
  1. 1.National Research University of Electronic TechnologyMoscowRussia
  2. 2.JSC RPC Istok named after ShokinFryazinoRussia

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