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Semiconductors

, Volume 53, Issue 11, pp 1540–1544 | Cite as

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

  • K. A. Svit
  • K. S. ZhuravlevEmail author
FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
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Abstract

The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.

Keywords:

cadmium sulfide nanocrystals self-assembly Langmuir–Blodgett technique 

Notes

FUNDING

This study was supported by the Russian Science Foundation, project no. 18-72-00027.

CONFLICT OF INTEREST

The authors claim that they have no conflict of interest.

REFERENCES

  1. 1.
    A. M. Smith and S. Nie, Acc. Chem. Res. 43, 190 (2010).CrossRefGoogle Scholar
  2. 2.
    C. Tablero, J. Appl. Phys. 106, 074306 (2009).ADSCrossRefGoogle Scholar
  3. 3.
    F. Xu, L. F. Gerlein, X. Ma, C. R. Haughn, M. F. Doty, and S. G. Cloutier, Materials 8, 1858 (2015).ADSCrossRefGoogle Scholar
  4. 4.
    D. Bera, L. Qian, T.-K. Tseng, and P. H. Holloway, Materials 3, 2260 (2010).ADSCrossRefGoogle Scholar
  5. 5.
    S. Wang, C. Querner, T. Dadosh, C. H. Crouch, D. S. Novikov, and M. Drndic, Nat. Commun. 2, 364 (2011).ADSCrossRefGoogle Scholar
  6. 6.
    M. A. Boles, M. Engel, and D. V. Talapin, Chem. Rev. 116, 11220 (2016).CrossRefGoogle Scholar
  7. 7.
    N. Vogel, M. Retsch, C. A. Fustin, A. Campo, and U. Jonas, Chem. Rev. 115, 6265 (2015).CrossRefGoogle Scholar
  8. 8.
    Q. Li, U. Jonas, X. S. Zhao, and M. Kappl, Asia Pacif. J. Chem. Eng. 3, 255 (2008).CrossRefGoogle Scholar
  9. 9.
    P. A. Kralchevsky and K. Nagayama, Langmuir 10, 23 (1994).CrossRefGoogle Scholar
  10. 10.
    C. Delerue, Nat. Mater. 15, 498 (2016).ADSCrossRefGoogle Scholar
  11. 11.
    G. Zotti, B. Vercelli, A. Berlin, M. Pasini, T. L. Nelson, R. D. McCulough, and T. Virgili, Chem. Mater. 22, 1521 (2010).CrossRefGoogle Scholar
  12. 12.
    D. K. Smith, B. Goodfellow, D.-M. Smilgies, and B. A. Korgel, J. Am. Chem. Soc. 131, 3281 (2009).CrossRefGoogle Scholar
  13. 13.
    M. P. Pileni, J. Phys. Chem. B 105, 3358 (2001).CrossRefGoogle Scholar
  14. 14.
    E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskii, and M. Voelskow, Semiconductors 37, 1321 (2003).ADSCrossRefGoogle Scholar
  15. 15.
    D. Yu. Protasov, W.-B. Jian, K. A. Svit, T. A. Duda, S. A. Teys, A. S. Kozhuhov, L. L. Sveshnikova, and K. S. Zhuravlev, J. Phys. Chem. C 115, 20148 (2011).CrossRefGoogle Scholar
  16. 16.
    K. A. Svit, D. Yu. Protasov, S. A. Teys, L. L. Sveshnikova, M. V. Yakushev, and K. S. Zhuravlev, Phys. Status Solidi C 13, 417 (2015).ADSCrossRefGoogle Scholar
  17. 17.
    A. G. Milekhin, L. L. Sveshnikova, S. M. Repinskii, A. K. Gutakovskii, M. Friedrich, and D. R. T. Zahn, Phys. Solid State 44, 1976 (2002).ADSCrossRefGoogle Scholar
  18. 18.
    S. A. Batsanov and A. K. Gutakovskii, Nanotechnol. Russ. 12, 369 (2017).CrossRefGoogle Scholar
  19. 19.
    L. Qiao and M. T. Swihart, Adv. Colloid Interface. Sci. 244, 199 (2017).CrossRefGoogle Scholar
  20. 20.
    M. A. Boles, M. Engel, and D. V. Talapin, Chem. Rev. 116, 11220 (2016).CrossRefGoogle Scholar
  21. 21.
    E. Rabani, D. R. Reichman, P. L. Geissler, and L. E. Brus, Nature (London, U.K.) 426 (6964), 271 (2003).ADSCrossRefGoogle Scholar
  22. 22.
    J. Tang, G. Ge, and L. E. Brus, J. Phys. Chem. B 106, 5653 (2002).CrossRefGoogle Scholar
  23. 23.
    E. Zaccareli, J. Phys.: Condens. Matter 19, 323101 (2007).Google Scholar
  24. 24.
    H. Tanaka, J. Phys.: Condens. Matter 12, R207 (2000).ADSGoogle Scholar
  25. 25.
    G. Ge and L. Brus, J. Phys. Chem. B 104, 9573 (2000).CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State UniversityNovosibirskRussia

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