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Semiconductors

, Volume 53, Issue 11, pp 1535–1539 | Cite as

Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells

  • M. A. MintairovEmail author
  • V. V. Evstropov
  • S. A. Mintairov
  • M. Z. Shvarts
  • N. A. Kalyuzhnyy
PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the VocJsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base pn junctions. In this case, the VocJsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

Keywords:

multiple-junction solar cells concentrated solar light photovoltaic characteristics current–voltage characteristics counteracting electromotive force tunnel diode 

Notes

CONFLICT OF INTEREST

The authors state that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • M. A. Mintairov
    • 1
    Email author
  • V. V. Evstropov
    • 1
  • S. A. Mintairov
    • 1
  • M. Z. Shvarts
    • 1
  • N. A. Kalyuzhnyy
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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