Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
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The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
Keywords:focused ion beam direct ion lithography nanolithography radiation defects annealing microphotoluminescence
We are grateful to the Russian Science Foundation (grant no. 16-12-10503).
CONFLICT OF INTEREST
The authors state that they have no conflict of interest.