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Semiconductors

, Volume 53, Issue 6, pp 822–827 | Cite as

Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection

  • V. V. RomanovEmail author
  • I. A. Belykh
  • E. V. Ivanov
  • P. A. Alekseev
  • N. D. Il’inskaya
  • Yu. P. Yakovlev
PHYSICS OF SEMICONDUCTOR DEVICES
  • 6 Downloads

Abstract

Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 μm at the emission-spectrum maximum are formed from these heterostructures. The room-temperature IV and electroluminescence characteristics of the light-emitting diodes are investigated. The emission powers of light-emitting diodes A and B in the quasi-continuous mode (at a frequency of 512 Hz) at a current of 250 mA are 24 and 15 μW, respectively. In the pulsed mode (at a frequency of 512 Hz and a pulse length of 1 μs), the emission powers of light-emitting diodes A and B at a current of 2.1 A reach 158 and 76 μW, respectively. The developed light-emitting diodes can be used as high-efficiency emission sources in optical absorption sensors for detecting carbon dioxide and monoxide gases in the atmosphere.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. V. Romanov
    • 1
    Email author
  • I. A. Belykh
    • 1
  • E. V. Ivanov
    • 1
  • P. A. Alekseev
    • 1
  • N. D. Il’inskaya
    • 1
  • Yu. P. Yakovlev
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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