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Semiconductors

, Volume 53, Issue 6, pp 853–859 | Cite as

Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

  • L. N. MaskaevaEmail author
  • E. A. Fedorova
  • V. F. Markov
  • M. V. Kuznetsov
  • O. A. Lipina
FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
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Abstract

Highly adhesive tin-monoselenide (SnSe) layers (200 ± 10) nm thick are grown by hydrochemical deposition from a trilonate reactive mixture. X-ray diffraction shows that the synthesized films crystallize in the orthorhombic system (space group Pnma). The significant oxygen content in the film surface layers is explained by the partial oxidation of samples with SnO2 phase formation. The results of ion etching to a depth of 18 nm show a sharp decrease in the oxygen content over thickness and real correspondence to the SnSe elemental composition. The band gap determined by optical studies for direct transitions is 1.69 eV. The synthesized SnSe layers exhibit p-type conductivity, which is characteristic of this material.

Notes

FUNDING

This study was supported by program 211 of the Government of the Russian Federation no. 02.А03.21.0006.

Optical measurements were performed within the program of the Ministry of Science and Higher Education of the Russian Federation no. АААА-А16-116122810218-7.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • L. N. Maskaeva
    • 1
    • 2
    Email author
  • E. A. Fedorova
    • 1
  • V. F. Markov
    • 1
    • 2
  • M. V. Kuznetsov
    • 3
  • O. A. Lipina
    • 3
  1. 1.Ural Federal University named after the first President of Russia B.N. YeltsinYekaterinburgRussia
  2. 2.Ural Institute of State Fire Service of EMERCOM of RussiaYekaterinburgRussia
  3. 3.Institute of Solid State Chemistry, Ural Branch, Russian Academy of SciencesYekaterinburgRussia

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