Diode Lasers with Near-Surface Active Region
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Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10–3 K/(W cm2).
The work is supported by the Russian Science Foundation (project 14-42-00006).
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