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Semiconductors

, Volume 52, Issue 14, pp 1871–1874 | Cite as

Spin Injection and Accumulation in the Planar NiFe–InSb–NiFe and NiFe–Cu–NiFe Spin Valves

  • Y. V. NikulinEmail author
  • Y. V. Khivintsev
  • A. G. Veselov
  • Y. A. Filimonov
SPIN-RELATED PHENOMENA IN NANOSTRUCTURES
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Abstract

Spin injection and accumulation have been studied for NiFe–InSb–NiFe and NiFe–Cu–NiFe planar spin valves with direct injection current I in nonlocal (NLSV) and local (LSV) measurement configurations at temperature 8–300 K. The value of the generated voltage U and the character of the dependence U(I) drastically changed for currents I greater some critical value Ic due to thermoelectric effects. For NLSV configuration and currents I<Ic the value of U is of 2–3 order of magnitude higher for NiFe–InSb–NiFe (U ≈ 1–3 mV at 300 K) structures in comparison with NiFe–Cu–NiFe (U ≈ 4–20 µV at 8 K). For LSV geometry electrical detection of spin current was observed only for NiFe–Cu–NiFe structure, where for I<Ic the magnetoresistance (MR) effect of the order 0.5% was detected. For currents I of 1.5–2% higher than Ic the MR of the order of 10–30% was observed for both NLSV and LSV configurations for studied structures.

Notes

ACKNOWLEDGMENTS

This work was supported by the Russian Foundation for Basic Research, projects nos. 16-37-60052, 16-29-14058.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • Y. V. Nikulin
    • 1
    • 2
    Email author
  • Y. V. Khivintsev
    • 1
    • 2
  • A. G. Veselov
    • 1
  • Y. A. Filimonov
    • 1
    • 2
    • 3
  1. 1.V.A. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch)SaratovRussia
  2. 2.Saratov State UniversitySaratovRussia
  3. 3.Yuri Gagarin State Technical University of SaratovSaratovRussia

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