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Semiconductors

, Volume 52, Issue 14, pp 1898–1900 | Cite as

Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure

  • I. V. LevitskiiEmail author
  • M. I. Mitrofanov
  • G. V. Voznyuk
  • D. N. Nikolaev
  • M. N. Mizerov
  • V. P. Evtikhiev
LASERS AND OPTOELECTRONIC DEVICES
  • 13 Downloads

Abstract

We present results of experiments concerning the loss of internal quantum efficiency of the GaAs/AlGaAs heterostructure due to the focused ion beam-induced radiation defects. Firstly we show that 300°C annealing in the high vacuum conditions leads to a partial recovery of the internal quantum efficiency and, therefore, photoluminescence regains some of its intensity. Secondly we show that 620°C annealing in the presence of As vapor leads up to 80% recovery of the internal quantum efficiency depending on the etching depth. Achieved results proves focused ion beam technique to be potent for the fabrication of photonic structures based on A3B5 materials containing active layer.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • I. V. Levitskii
    • 1
    Email author
  • M. I. Mitrofanov
    • 1
  • G. V. Voznyuk
    • 2
  • D. N. Nikolaev
    • 1
  • M. N. Mizerov
    • 3
  • V. P. Evtikhiev
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.ITMO UniversitySt. PetersburgRussia
  3. 3.Submicron Heterostructures for Microelectronics, Research and Engineering CenterSt. PetersburgRussia

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