Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks
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We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.
D.V. L., A.Yu. R., P.A. B. and V.I. S. acknowledge funding provided by Russian Foundation of Fundamental Research (project no. 18-32-00321). This work included spectroscopic experiments and analysis.
E.P., A.G, G.J. acknowledge funding provided by Science Foundation Ireland under grants 12/RC/2276 and 15/IA/2864.
A.M. M. acknowledge funding provided by Ministry of the Education and Science of the Russian Federation (contract no. 14.Z50.31.0021)
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