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Semiconductors

, Volume 52, Issue 13, pp 1669–1671 | Cite as

Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

  • D. A. Usanov
  • A. E. Postelga
  • A. A. KalyaminEmail author
  • I. V. Sharov
ELECTRONIC PROPERTIES OF SEMICONDUCTORS

Abstract

The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • D. A. Usanov
    • 1
  • A. E. Postelga
    • 1
  • A. A. Kalyamin
    • 1
    Email author
  • I. V. Sharov
    • 1
  1. 1.National Research Saratov State University named after N.G. ChernyshevskySaratovRussia

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