Semiconductors

, Volume 52, Issue 5, pp 602–604 | Cite as

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

  • I. V. Shtrom
  • N. G. Filosofov
  • V. F. Agekian
  • M. B. Smirnov
  • A. Yu. Serov
  • R. R. Reznik
  • K. E. Kudryavtsev
  • G. E. Cirlin
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
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Abstract

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • I. V. Shtrom
    • 1
    • 2
    • 3
  • N. G. Filosofov
    • 3
  • V. F. Agekian
    • 3
  • M. B. Smirnov
    • 3
  • A. Yu. Serov
    • 3
  • R. R. Reznik
    • 1
    • 2
    • 4
  • K. E. Kudryavtsev
    • 5
  • G. E. Cirlin
    • 1
    • 2
    • 4
  1. 1.St. Petersburg Academic UniversityRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Institute for Analytical InstrumentationRussian Academy of SciencesSt. PetersburgRussia
  3. 3.St. Petersburg State UniversitySt. PetersburgRussia
  4. 4.ITMO UniversitySt. PetersburgRussia
  5. 5.Institute for Physics of Microstructures of the Russian Academy of SciencesNizhny NovgorodRussia

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