Abstract
The phenomenon of the low-temperature transition from antiferro- to ferromagnetic ordering of impurity spins in a nonmagnetic compensated n-Ge:As semiconductor near the metal-insulator phase transformation has been experimentally observed. The effect is manifested by rather sharp changes in the spin density and g-factor in the electron spin resonance spectra. As the relative content of a compensating impurity (gallium) is reduced below 0.7, the transition temperature begins to decrease and, at a degree of compensation below 0.3, drops below the studied temperature range (i.e., below 2 K).
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Original Russian Text © A.I. Veinger, A.G. Zabrodskii, T.L. Makarova, T.V. Tisnek, S.I. Goloshchapov, P.V. Semenikhin, 2013, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 143, No. 5, pp. 918–921.
The article is based on a preliminary report delivered at the 36th Conference on Low-Temperature Physics (St. Petersburg, July 2–6, 2012).
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Veinger, A.I., Zabrodskii, A.G., Makarova, T.L. et al. Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition. J. Exp. Theor. Phys. 116, 796–799 (2013). https://doi.org/10.1134/S1063776113050142
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DOI: https://doi.org/10.1134/S1063776113050142