Russian Microelectronics

, Volume 48, Issue 6, pp 394–401 | Cite as

Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region

  • N. V. Masal’skiiEmail author


The issues of modeling the basic electrophysical characteristics of fully depleted surrounding-gate CMOS nanotransistors with an unevenly doped working region are discussed. The case of a Gaussian impurity distribution in the radial direction with the maximum in the center of the working area is analyzed. A mathematical model of the potential distribution following from an analytical solution of the 2D Poisson equation is treated. The results of model calculations of the potential distribution of a sub-50 nm structures are in good agreement with the data obtained using the commercially available ATLASTM software package for the 2D modeling of transistor structures. Based on the obtained potential distributions, the characteristics of the current are calculated using the tested approach formulated in the charge separation concept. For the topological norms chosen, optimization of the steepness of the doping profile provides an additional opportunity to control the key characteristics, together with the radius of the working region and the thickness of the gate oxide. This is important when analyzing the applicability of the analyzed nanotransistor structures.


fully depleted surrounding-gate CMOS nanotransistor 2D Poisson equation unevenly doped working region current–voltage characteristics 



The work was performed as part of a state assignment for Basic Scientific Research (GP 14), project no. 0065-2019-0001.


  1. 1.
    Ferain, I., Colinge, C.A., and Colinge, J., Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors, Nature (London, U.K.), 2011, vol. 479, pp. 310–316.CrossRefGoogle Scholar
  2. 2.
    He, J., Liu, F., Bian, W., Feng, J., Zhang, J., and Zhang, X., An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body, Semicond. Sci. Technol., 2007, vol. 22, no. 6, pp. 671–677.CrossRefGoogle Scholar
  3. 3.
    Son, A., Kim, J., Jeong, N., Choi, J., and Shin, H., Improved explicit current-voltage model for long-channel undoped surrounding-gate metal oxide semiconductor field effect transistor, J. Appl. Phys., 2009, vol. 48, pp. 412–413.Google Scholar
  4. 4.
    Suh, C., Two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted cylindrical/surrounding gate MOSFET, J. Semicond. Technol. Sci., 2011, vol. 11, no. 2, pp. 111–120.CrossRefGoogle Scholar
  5. 5.
    Jimenez, D. and Inguiez, B., Continuous analytic I–V model for surrounding-gate MOSFETs, IEEE Electron Dev. Lett., 2004, vol. 25, no. 8, pp. 571–573.CrossRefGoogle Scholar
  6. 6.
    Iniguez, B., Jimenez, D., Roig, J., Hamidi, H.-A., Marsal, L.F., and Pallares, J., Explicit continuous model for long-channel undoped surrounding-gate MOSFETs, IEEE Trans. Electron. Dev., 2005, vol. 52, no. 8, pp. 1868–1873.CrossRefGoogle Scholar
  7. 7.
    Kranti, A. and Armstrong, G.A., Engineering source/ drain extension regions in nanoscale double gate (DG) SOI MOSFETs: analytical model and design considerations, Solid State Electron., 2006, vol. 50, no. 4, pp. 437–447.CrossRefGoogle Scholar
  8. 8.
    Masal’skii, N.V., Characteristics of two gate SOI CMOS nanotransistors for advanced technologies with low power consumption, Mikroelektronika, 2012, vol. 41, no. 6, pp. 436–444.Google Scholar
  9. 9.
    Colinge, J.P., Multiple-gate SOI MOSFETs, Solid State Electron., 2004, vol. 48, no. 3, pp. 897–909.CrossRefGoogle Scholar
  10. 10.
    Hamid, H.A.E., Iniguez, B., and Guitart, J.R., Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs, IEEE Electron Dev., 2007, vol. 54, no. 3, pp. 572–579.CrossRefGoogle Scholar
  11. 11.
    Yuan, Y., Yu, B., Song, J., and Taur, Y., An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass, Solid State Electon., 2009, vol. 53, no. 2, pp. 140–144.CrossRefGoogle Scholar
  12. 12.
    Masal’skii, N.V., Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor, Russ. Microelectron., 2017, vol. 46, no. 2, p. 139.CrossRefGoogle Scholar
  13. 13.
    Silvaco, Int., ATLAS User’s Manual: A 2D Numerical Device Simulator. Accessed Nov. 25, 2016.Google Scholar
  14. 14.
    Kim, J., Sun, W., Park, S., Lim, H., and Shin, H., A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors, J. Semicond. Technol. Sci., 2011, vol. 11, no. 4, pp. 278–286.CrossRefGoogle Scholar
  15. 15.
    Zhang, L., Ma, C., He, J., Lin, X., and Chan, M., Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET, Solid State Electron., 2010, vol. 54, no. 8, pp. 806–808.CrossRefGoogle Scholar
  16. 16.
    Chiang, T.K., A compact model for threshold voltage of surrounding-gate MOSFETs with localized interface trapped charges, IEEE Trans. Electron Dev., 2011, vol. 58, no. 2, pp. 567–571.CrossRefGoogle Scholar
  17. 17.
    Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981.Google Scholar
  18. 18.
    Lee, K., Choi, J., Sim, S., and Kim, C., Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer, IEEE Trans. Electron. Dev., 1991, vol. 38, no. 8, pp. 1905–1912.CrossRefGoogle Scholar
  19. 19.
    Neamen, D., Semiconductor Physics and Devices: Basic Principles, New York: McGraw-Hill, 2011.Google Scholar
  20. 20.
    Sharma, D. and Vishvakarma, S.K., Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET, Solid State Electron., 2013, vol. 86, pp. 68–74.CrossRefGoogle Scholar
  21. 21.
    Cheralathan, M. and Iniguez, B., Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations, Solid State Electron., 2011, vol. 55, no. 1, pp. 13–18.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Federal Research Center Scientific Research Institute for System Research, Russian Academy of SciencesMoscowRussia

Personalised recommendations