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Russian Microelectronics

, Volume 48, Issue 3, pp 131–142 | Cite as

Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language

  • G. S. TeplovEmail author
  • E. S. GornevEmail author
Article

Abstract

We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly resistive and low-resistance state, the switching threshold variations, and the variation of the number of switching cycles.

Keywords:

memristor simulation memristor bipolar memristor multilevel memristor Verilog-A model switching parameter deviations 

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Molecular Electronics Research Institute (AO MERI)MoscowRussia

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