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Russian Microelectronics

, Volume 48, Issue 3, pp 197–201 | Cite as

Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions

  • D. I. BrinkevichEmail author
  • A. A. Kharchenko
  • V. S. Prosolovich
  • V. B. Odzhaev
  • S. D. Brinkevich
  • Yu. N. Yankovskii
Article

Abstract

We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В+ and Р+ ions by measuring the reflection’s spectra. It is shown that implantation reduces the refractive index of the photoresist. In the opacity region of the photoresist film, the reflection coefficient grows with an increasing implantation dose, especially in the case of P+ ion implantation. The spectral dependences of the optical length for the implanted photoresist films have two regions with anomalous dispersion near the wavelengths of 350 and 430 nm, which correspond to the absorption bands of naphthoquinone diazide molecules.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • D. I. Brinkevich
    • 1
    Email author
  • A. A. Kharchenko
    • 1
  • V. S. Prosolovich
    • 1
  • V. B. Odzhaev
    • 1
  • S. D. Brinkevich
    • 1
  • Yu. N. Yankovskii
    • 1
  1. 1.Belarusian State UniversityMinskBelarus

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