Influence of a Carbon-Modified Surface on the Field-Emission Properties of Silicon Crystals
Multi-point cathode matrices, the surface density of which is 107–109 cm–2 and the maximum field-emission current density is 1.5–2 orders of magnitude higher than that obtained on silicon crystals with the help of traditional microelectronic technologies, are fabricated using the self-organization phenomenon during the microwave plasma deposition of submonolayer carbon mask films onto silicon (100) crystals with a natural oxide coating and highly anisotropic plasma-chemical etching. The mechanism whereby mask carbon coatings are formed is discussed, and the optimal duration of the formation processes is determined. The interdependence between the surface morphology and field-emission properties is described in the scope of the Fowler‒Nordheim theory taking into account microstructural changes in the surface phases of silicon asperities.
Keywordsfield emission of electrons silicon surface modification carbon
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