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Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation

  • V. V. Privezentsev
  • V. A. Skuratov
  • V. S. Kulikauskas
  • A. V. Makunin
  • S. V. Ksenich
  • E. A. Steinman
  • A. N. Tereshchenko
  • A. V. Goryachev
Article
  • 16 Downloads

Abstract

50 keV 64Zn+ ions to a dose of 5 × 1016 cm–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV 132Xe26+ ions with a fluence ranging from 1 ×1012 up to 5 × 1014 cm–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence.

Keywords

silicon zinc implantation zinc oxide swift xenon ion irradiation scanning electron microscopy energy-dispersive microanalysis atomic force microscopy time-of-flight secondary ion mass spectrometry photoluminescence radiation-induced point defects clusters of defects 

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. V. Privezentsev
    • 1
  • V. A. Skuratov
    • 2
    • 3
  • V. S. Kulikauskas
    • 4
  • A. V. Makunin
    • 4
  • S. V. Ksenich
    • 5
  • E. A. Steinman
    • 6
  • A. N. Tereshchenko
    • 6
  • A. V. Goryachev
    • 7
  1. 1.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia
  2. 2.Joint Institute for Nuclear ResearchDubna, Moscow oblastRussia
  3. 3.National Research Nuclear University “MEPhI”MoscowRussia
  4. 4.Skobeltsyn Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia
  5. 5.National University of Science and Technology “MISiS”MoscowRussia
  6. 6.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovka, Moscow oblastRussia
  7. 7.National Research University of Electronic Technology “MIET”Zelenograd, MoscowRussia

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