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Effect of High-Fluence Ion Irradiation on the Structure and Electrical Properties of Polycrystalline Diamond

  • V. A. Anikin
  • A. M. Borisov
  • V. A. Kazakov
  • A. V. Kudrin
  • E. S. Mashkova
  • A. I. Morkovkin
  • M. A. Ovchinnikov
  • E. A. Pitirimova
Article
  • 12 Downloads

Abstract

The results of experimental investigation of the surface layer of polycrystalline diamond modified by high-fluence (≥1018 cm–2) 30-keV Ar+ ion irradiation are presented. The reflection high-energy electron diffraction (RHEED) patterns, Raman spectra, and temperature dependences of the electrical resistance are analyzed. It is found that depending on the irradiation conditions and temperature treatment of diamond a modified layer is formed with either a disorderd structure and semiconductor conductivity or the graphite structure and metallic conductivity.

Keywords

high-fluence ion irradiation polycrystalline diamond surface layer crystal structure reflection high-energy electron diffraction (RHEED) sheet resistance resistivity Raman spectra 

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. A. Anikin
    • 1
  • A. M. Borisov
    • 1
  • V. A. Kazakov
    • 1
    • 2
  • A. V. Kudrin
    • 3
  • E. S. Mashkova
    • 4
  • A. I. Morkovkin
    • 4
  • M. A. Ovchinnikov
    • 1
    • 4
  • E. A. Pitirimova
    • 3
  1. 1.Moscow Aviation Institute (National Research University)MoscowRussia
  2. 2.Keldysh Research CenterMoscowRussia
  3. 3.Lobachevsky State University of Nizhny NovgorodNizhny NovgorodRussia
  4. 4.Skobeltsyn Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia

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