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Russian Journal of Inorganic Chemistry

, Volume 63, Issue 6, pp 822–825 | Cite as

Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

  • V. I. Kosyakov
  • V. A. Shestakov
  • M. L. Kosinova
Physicochemical Analysis of Inorganic Systems

Abstract

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В4С, В4С + В2О3, С + В2О3 + В4С, С + В2О3, С + В2О3 + НВО2, С + НВО2, С + В4С, and a В4С phase.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. I. Kosyakov
    • 1
  • V. A. Shestakov
    • 1
  • M. L. Kosinova
    • 1
  1. 1.Nikolaev Institute of Inorganic Chemistry, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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