JETP Letters

, Volume 109, Issue 5, pp 320–324 | Cite as

Effect of the Semiconductor Spacer on Positive Exchange Bias in the CoNi/Si/FeNi Three-Layer Structure

  • G. S. PatrinEmail author
  • I. A. Turpanov
  • V. I. Yushkov
  • A. V. Kobyakov
  • K. G. Patrin
  • G. Yu. Yurkin
  • Ya. A. Zhivaya
Condensed Matter


Films consisting of a hard magnetic ferromagnet CoNi and a soft magnetic ferromagnet FeNi interacting through a nonmagnetic Si semiconductor spacer are experimentally studied. The temperature and field dependences of the magnetic properties of film structures with different silicon thicknesses are examined. It is found that the multilayer structure has the properties inherent in magnetic springs and exhibits positive exchange bias as a function of the silicon thickness.


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Copyright information

© Pleiades Publishing, Inc. 2019

Authors and Affiliations

  • G. S. Patrin
    • 1
    • 2
    Email author
  • I. A. Turpanov
    • 1
  • V. I. Yushkov
    • 1
    • 2
  • A. V. Kobyakov
    • 1
    • 2
  • K. G. Patrin
    • 1
  • G. Yu. Yurkin
    • 1
  • Ya. A. Zhivaya
    • 1
  1. 1.Siberian Federal UniversityKrasnoyarskRussia
  2. 2.Kirensky Institute of Physics, Federal Research Center KSC, Siberian BranchRussian Academy of SciencesKrasnoyarskRussia

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