Inorganic Materials

, Volume 55, Issue 9, pp 915–919 | Cite as

Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2

  • I. Ya. MittovaEmail author
  • B. V. Sladkopevtsev
  • A. A. Samsonov
  • E. V. Tomina
  • S. Yu. Andreenko
  • P. V. Kostenko


MnO2 surface layers and the addition of Mn3(PO4)2 through the gas phase have an advantageous combined effect on the thermal oxidation of InP, increasing the growth rate of the oxide film, ensuring rapid chemical binding of the indium, blocking its diffusion into the film, and activating phosphate formation processes, which leads to the formation of dielectric nanofilms with resistivity as high as 1010 Ω cm.


indium phosphide nanofilms thermal oxidation manganese(II) phosphate manganese(IV) oxide 



In our work, we used equipment at the Shared Research Facilities Center, Voronezh State University.


This research was supported by the Russian Foundation for Basic Research, project no. 18-03-00354a.


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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • I. Ya. Mittova
    • 1
    Email author
  • B. V. Sladkopevtsev
    • 1
  • A. A. Samsonov
    • 1
  • E. V. Tomina
    • 1
  • S. Yu. Andreenko
    • 1
  • P. V. Kostenko
    • 1
  1. 1.Voronezh State UniversityVoronezhRussia

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