Abstract
Copper indium gallium diselenide (CIGS) thin films have shown considerable promise for use as an absorber layer in high-efficiency solar cells. The initial results obtained from the preparation of CIGS films via laser ablation and flash evaporation are presented along with a comparison of the two deposition processes. The as-deposited CIGS films have been characterized by a variety of techniques, namely Rutherford back scattering and energy dispersive analysis using X-rays for composition measurements X-ray diffraction and Raman spectroscopy for structure elucidation, SEM for surface examination, and the four-point probe for resistivity measurements. In essence, good-quality coatings of CIGS were produced from both deposition processes in terms of their stoichiometry, electrical and structural properties.
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AHMED, E., HILL, A.E., PILKINGTON, R.D. et al. Deposition and characterization of copper indium gallium diselenide films by laser ablation and flash evaporation for use in solar cells. Journal of Materials Science 32, 5611–5613 (1997). https://doi.org/10.1023/A:1018684726577
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DOI: https://doi.org/10.1023/A:1018684726577