Journal of Materials Science

, Volume 32, Issue 18, pp 4999–5003 | Cite as

Fabrication of high aspect ratio silicon micro-tips for field emission devices

  • In Jae Chung
  • D. B Murfett
  • A Hariz
  • M. R Haskard


The evolution of higher order {221} and {331} crystal planes during corner undercutting in the anisotropic etching of (100) silicon is discussed, and the occurrence of highly vertical (72.5°) {311} planes unique to KOH etches are demonstrated. Using a combined etching technique, very high aspect ratio micro-tips are formed and their distinct advantages for vacuum microelectronics and field-emission devices (FED) are described.


High Aspect Ratio Etch Rate Undercut Pyrazine Pyrocatechol 


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  1. 1.
    KUNIYOSHI YOKOO, in Proceedings of the 7th International Conference on Solid-State Sensors and Actuators, p. 868.Google Scholar
  2. 2.
    I. BRODIE and P. R. SCHWOEBEL, Proceedings of the IEEE 82 (1994).Google Scholar
  3. 3.
    TAKAO UTSUMI, IEEE Transactions on Electron Devices 38 (1991) 2276.CrossRefGoogle Scholar
  4. 4.
    A. KANEKO, T. KANNO, K. TOMII, M. KITAGAWA and T. HIRAO, ibid, 38 (1991) 2395.CrossRefGoogle Scholar
  5. 5.
    J. B. WARREN, “Control of silicon Field emitter shape with isotropically etched oxide masks”, Institute of Physics Conference Series, No. 99, (IOP, London, 1989) p. 37.Google Scholar
  6. 6.
    N. A. CADE, R. A. LEE and C. PATEL, IEEE Trans. on Electron Devices 36 (1989) 2709.CrossRefGoogle Scholar
  7. 7.
    R. N. THOMAS, R. A. WICKSTROM, D. K. SCHRODER and H. C. NATHANSON, Solid State Electronics 17 (1974) 155.CrossRefGoogle Scholar
  8. 8.
    J. T. TRUJILLO and C. E. HUNT, Semiconductor Science and Technology 6 (1991) 223.CrossRefGoogle Scholar
  9. 9.
    P. C. ALLEN, “Silicon Field emitter arrays: fabrication and operation”, Institute of Physics Conference Series, No. 99, Section 2, (IOP, London, 1989).Google Scholar
  10. 10.
    A. REISMAN, M. BERKENBLIT, S. A. CHAN, F. B. KAUFMAN and D. C. GREEN, J. Electrochem Soc. 126 (1979) 1406.CrossRefGoogle Scholar
  11. 11.
    K. E. BEAN, IEEE Transactions on Electron Devices ED-25 (1978) 1185.CrossRefGoogle Scholar
  12. 12.
    XIAN-PING WU and WEN H. KO, Sensors and Actuators 18 (1989) 207.CrossRefGoogle Scholar
  13. 13.
    DAH-BIN KAO, J. P. McVITTIE, W. D. NIX and K. C. SARASWAT, IEEE Transactions on Electron Devices ED-34 (1987) 1008.Google Scholar
  14. 14.
    K. E. BEAN and J. R. LAWSON, IEEE Journal of Solid-State Circuits SC-9 3 (1974) 111.CrossRefGoogle Scholar

Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • In Jae Chung
    • 1
  • D. B Murfett
  • A Hariz
  • M. R Haskard
  1. 1.Microelectronics Centre, Department of Electronic EngineeringUniversity of South AustraliaThe Levels South AustraliaAustralia

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