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Journal of Materials Science

, Volume 32, Issue 21, pp 5611–5613 | Cite as

Deposition and characterization of copper indium gallium diselenide films by laser ablation and flash evaporation for use in solar cells

  • E AHMED
  • A. E HILL
  • R. D PILKINGTON
  • R. D TOMLINSON
  • J LEPPAVUORI
  • J LEVOSKA
  • O KUSMARTSEVA
  • W AHMED
  • A AFZAL
Article

Abstract

Copper indium gallium diselenide (CIGS) thin films have shown considerable promise for use as an absorber layer in high-efficiency solar cells. The initial results obtained from the preparation of CIGS films via laser ablation and flash evaporation are presented along with a comparison of the two deposition processes. The as-deposited CIGS films have been characterized by a variety of techniques, namely Rutherford back scattering and energy dispersive analysis using X-rays for composition measurements X-ray diffraction and Raman spectroscopy for structure elucidation, SEM for surface examination, and the four-point probe for resistivity measurements. In essence, good-quality coatings of CIGS were produced from both deposition processes in terms of their stoichiometry, electrical and structural properties.

Keywords

Selenium Laser Ablation CuInSe Energy Dispersive Analysis Raction Pattern 

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Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • E AHMED
    • 1
  • A. E HILL
    • 1
  • R. D PILKINGTON
    • 1
  • R. D TOMLINSON
    • 1
  • J LEPPAVUORI
    • 2
  • J LEVOSKA
    • 2
  • O KUSMARTSEVA
    • 2
  • W AHMED
    • 3
  • A AFZAL
    • 3
  1. 1.Department of PhysicsUniversity of SalfordUK
  2. 2.Microelectronics and Materials Physics LaboratoriesUniversity of OuluOuluFinland
  3. 3.Department of ChemistryManchester Metropolitan UniversityManchesterUK

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