Journal of Materials Science

, Volume 32, Issue 23, pp 6147–6152 | Cite as

Conduction mechanisms deduced from thermoelectric power and direct-current conductivity measurements in co-evaporated Mn/SiOx thin films

  • S. Z. A Zaidi
  • J Beynon
  • C. B Steele


The thermoelectric power and direct-current (d.c.) conductivity of co-evaporated Mn/SiOx films deposited at the rate of 0.5 nm s-1, 100 nm thick and containing 1, 3 and 5 at% Mn have been measured over the temperature ranges 258–588 K and 110–575 K, respectively. Thermoelectric power and d.c. conductivity measurements suggest that, over the temperature range 258–360 K, conduction occurs by hopping due to delocalized electrons at the Fermi level and electrons in donor localized states, intrinsic over the temperature range 360–558 K and metallic like above 558 K. The d.c. conductivity is activated over the whole temperature range investigated.


Conduction Mechanism Thermoelectric Power Intrinsic Conduction Silicon Monoxide Seebeck Voltage 


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Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • S. Z. A Zaidi
    • 1
  • J Beynon
  • C. B Steele
  1. 1.Physics DepartmentBrunel UniversityUxbridge MiddxUK

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