Journal of Materials Science

, Volume 32, Issue 8, pp 2063–2070 | Cite as

Preparation of La0.5Li0.5TiO3 perovskite thin films by the sol–gel method

  • T YOKO


Perovskite La0.5Li0.5TiO3 (LLT) thin films, 0.2–1 μm thick, were deposited on non-alkali aluminoborosilicate glass substrates (NA substrates) and glass substrates with ITO (indium tin oxide) coatings (ITO substrates) by the sol–gel method. Alkoxide-based solutions containing titanium alkoxide, lithium alkoxide and lanthanum alkoxide and acetate-based solutions containing titanium alkoxide, lithium acetate and lanthanum acetate, were used as coating solutions. Impurity phases tended to be precipitated on heat treatment in the films derived from the acetate-based solutions. Addition of acetylacetone or partial substitution of lead for lithium in the acetate-based solutions, however, was effective in suppressing the precipitation of impurity phases. Preferred orientation of the LLT (1 1 1/2) plane was observed in the films prepared from the acetate-based solutions when NA substrates were used, whereas the employment of the alkoxide-based solutions or ITO substrates and the partial substitution of lead for lithium, reduced the preferred orientation. The electrical conductivity of the films was much lower than the values reported for the sintered materials.


Acetylacetone Impurity Phase Lithium Content Titanium Alkoxide Lithium Acetate 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    G. ADACHI and H. AONO, Ceramics 27 (1992) 117 (in Japanese).Google Scholar
  2. 2.
    U. V. ALPEN, A. RABENAU and G. H. TALAT, Appl. Phys. Lett. 30 (1977) 621.CrossRefGoogle Scholar
  3. 3.
    R. MERCIER, J.-P. MALUGANI, B. FAHYS and G. ROBERT, Solid State Ionics 5 (1981) 663.CrossRefGoogle Scholar
  4. 4.
    H. WADA, M. MENETRIER, A. LEVASSEUR and P. HAGENMULLER, Mater. Res. Bull. 18 (1983) 189.CrossRefGoogle Scholar
  5. 5.
    R. KANNO, Y. TAKEDA, K. TAKADA and O. YAMAMOTO, J. Electrochem. Soc. 131 (1984) 469.CrossRefGoogle Scholar
  6. 6.
    J. KUWANO and A. R. WEST, Mater. Res. Bull. 15 (1980) 1661.CrossRefGoogle Scholar
  7. 7.
    H. AONO, E. SUGIMOTO, Y. SADAOKA, N. IMANAKA and G. ADACHI, J. Electrochem. Soc. 137 (1990) 1023.CrossRefGoogle Scholar
  8. 8.
    Y. INAGUMA, C. LIQUAN, M. ITOH and T. NAKAMURA, Solid State Commun. 86 (1993) 689.CrossRefGoogle Scholar
  9. 9.
    J. BROUS, I. FANKUCHEN and E. BANKS, Acta Crystallogr. 6 (1953) 67.CrossRefGoogle Scholar
  10. 10.
    P. V. PATIL and V. S. CHINCHOLKAR, Curr. Sci. 15 (1970) 348.Google Scholar
  11. 11.
    A. M. VARAPRASAD, A. L. SHASHI MOHAN, D. K. CHAKRABARTY and A. B. BISWAS, J. Phys. C Solid State Phys. 12 (1979) 465.CrossRefGoogle Scholar
  12. 12.
    L. L. KOCHERGINA, N. B. KHAKHIN, N. V. POROTNIKOV and K. I. PETROV, Russ. J. Inorg. Chem. 29 (1984) 506.Google Scholar
  13. 13.
    C. J. BRINKER and G. W. SCHERER, “Sol-Gel Science: the Physics and Chemistry of Sol-Gel Processing” (Academic Press, New York, 1990) Ch. 13.Google Scholar

Copyright information

© Chapman and Hall 1997

Authors and Affiliations

    • 1
    • 2
    • 2
  • T YOKO
    • 2
  1. 1.Itami PlantMinolta Co. LtdItami Hyogo-KenJapan
  2. 2.Institute for Chemical ResearchKyoto UniversityUji Kyoto-FuJapan

Personalised recommendations