A novel multi-physics field optimization method for GaN HEMT circuit design

Abstract

A device modeling and topology design method suitable for high-power-density and high-temperature applicationare important to develop with the development of devices. A novel multi-physics analysis model based on GaN high electron mobility transistor (HEMT) is proposed in this paper. The coupled electromagnetic and electrothermal model for GaN HEMT is beneficial to simulate a device’s external characteristic waveform affected by different stray parameters in the surrounding. In addition, the proposed method can accurately reflect the switching loss and transient switching process of GaN HEMT.

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Correspondence to Rui Zhang.

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Zhang, R., Wang, Y. & Xu, H. A novel multi-physics field optimization method for GaN HEMT circuit design. J. Power Electron. 21, 616–623 (2021). https://doi.org/10.1007/s43236-020-00205-5

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Keywords

  • Multi-physics
  • GaN HEMT
  • Equivalent circuit
  • High-frequency circuit