Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films

  • Jae-Hyun Shim
  • Ju-Han Kim
  • Nam-Hee ChoEmail author
Regular Paper


Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using SiH4/H2 gas. The Si nanocrystallites of the films consisted of Si–Hn (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the H2 flow rate from 60 to 90 sccm. At the H2 flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds.


Silicon Plasma enhanced chemical vapor deposition Photoluminescence Nanostructure Nanocrystallite Chemical bonding 



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Copyright information

© The Korean Institute of Electrical and Electronic Material Engineers 2019

Authors and Affiliations

  1. 1.Department of Advanced Materials and Energy EngineeringDongshin UniversityNajuRepublic of Korea
  2. 2.Department of Materials Science and EngineeringInha UniversityIncheonRepublic of Korea

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