Analysis of single-event transient sensitivity in fully depleted silicon-on-insulator MOSFETs
Based on 3D-TCAD simulations, single-event transient (SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator (FDSOI) transistors are investigated. This work presents a comparison between 28-nm technology and 0.2-μm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.
KeywordsSingle-event transient Charge collection Bipolar amplification Fully depleted silicon-on-insulator
- 3.S. Luan, H. Liu, R. Jia et al., 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Phys. Sin. 57, 3807 (2008). (in Chinese) Google Scholar
- 6.L. W. Massengill, B. L. Bhuva, W. T. Holman et al., Technology scaling and soft error reliability. in Proceedings of IEEE International Reliability Physics Symposium, 2012, p. 3C-1. https://doi.org/10.1109/irps.2012.6241810
- 11.J. Bi, R.A. Reed, R.D. Schrimpf et al., Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs. in Proceedings of IEEE International Reliability Physics Symposium, 2013, p. SE-2. https://doi.org/10.1109/irps.2013.6532109
- 13.J. Bi, B. Li, Z. Han et al., 3D TCAD simulation of single-event-effect in n-channel transistor based on deep sub-micron fully-depleted silicon-on-insulator technology. in Proceedings IEEE International Conference on Solid-State and Integrated Circuit Technology. Oct. 28–31, 2014, Guilin, China, p.1. https://doi.org/10.1109/icsict.2014.7021288
- 18.D. Neamen, Semiconductor physics and devices (McGraw-Hill, New York, 2002), p. 157Google Scholar