Topics in Current Chemistry

, 374:84 | Cite as

Applications of Accelerators and Radiation Sources in the Field of Space Research and Industry

Review
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Part of the following topical collections:
  1. Applications of Radiation Chemistry

Abstract

Beyond their important economic role in commercial communications, satellites in general are critical infrastructure because of the services they provide. In addition to satellites providing information which facilitates a better understanding of the space environment and improved performance of physics experiments, satellite observations are also used to actively monitor weather, geological processes, agricultural development and the evolution of natural and man-made hazards. Defence agencies depend on satellite services for communication in remote locations, as well as for reconnaissance and intelligence. Both commercial and government users rely on communication satellites to provide communication in the event of a disaster that damages ground-based communication systems, provide news, education and entertainment to remote areas and connect global businesses. The space radiation environment is an hazard to most satellite missions and can lead to extremely difficult operating conditions for all of the equipment travelling in space. Here, we first provide an overview of the main components of space radiation environment, followed by a description of the basic mechanism of the interaction of radiation with matter. This is followed by an introduction to the space radiation hardness assurance problem and the main effects of natural radiation to the microelectronics (total ionizing dose, displacement damage and the single-event effect and a description of how different effects occurring in the space can be tested in on-ground experiments by using particle accelerators and radiation sources. We also discuss standards and the recommended procedures to obtain reliable results.

Keywords

Space radiation environment Space product assurance Radiation hardness Single event effect Total ionizing dose Displacement damage 

References

  1. 1.
    National Aeronautics and Space Administration (NASA) (1999) Space radiation effects on electronic components in low earth orbit. Lesson 824. Johnson Space Center, Houston. http://llis.nasa.gov/lesson/824. Accessed 23 Nov 2016
  2. 2.
    Van Allen L, Ludwig G, McIlwain R. Observation of high intensity radiation by satellites 1958 alpha and gamma. In: IGY Satellite Series, vol 3. National Academy of Sciences, Washington DC, p 73Google Scholar
  3. 3.
    Lang KR (2001) The Cambridge encyclopedia of the sun. Cambridge University Press, CambridgeGoogle Scholar
  4. 4.
    A travel in radiation activities through a Space program—Short course (2011) 12th European Conference on Radiation and its effects on Component and Systems (RADECS), SevillaGoogle Scholar
  5. 5.
    Sawyer DM, Vette JI (1976) AP-8 trapped proton environment for solar maximum and solar minimum. NASA STIRecon Technical Report N, vol 77, p 18983. http://hdl.handle.net/2060/19770012039. Accessed 23 Nov 2016
  6. 6.
    Vampola AL (1997) Outer zone energetic electron environment update. In: Proceedings of the IEEE conference on high energy radiation background in space, p 128–136Google Scholar
  7. 7.
    SPENVIS Collaboration. The space environment information system, 1997–2009. http://www.spenvis.oma.be. Accessed 23 Nov 2016
  8. 8.
    The CREME Collaboration. CREME-MC. https://creme.isde.vanderbilt.edu. Accessed 23 Nov 2016
  9. 9.
    Jokipii J, Sonett C, Giampapa M (eds) (1997) Cosmic winds and the heliosphere. Space Science Series. Tucson, University of Arizona PressGoogle Scholar
  10. 10.
    Andrews MD (2003) A search for CMEs associated with big flares. Sol Phys 218:261–279CrossRefGoogle Scholar
  11. 11.
    Ramesh KB (2010) Coronal mass ejections and sunspots—solar cycle perspective. Astrophys J Lett 712:L77–L80CrossRefGoogle Scholar
  12. 12.
    Gabriel SB (1998) Cosmic rays and solar protons in the near earth environment and their entry into the magnetosphere. ESA Workshop on Space Weather, ESTEC, The Netherlands, NoordwijkGoogle Scholar
  13. 13.
    Lario D, Decker RB, Re-examination of the October 20, 1989 ESP event,  Conf. Proc. of the ICRC 2001 07–15 August, Hamburg, p 3485Google Scholar
  14. 14.
    Mewaldt RA, Cummings AC, Cummings JR et al (1993) The return of the anomalous cosmic rays to 1 AU in 1992. Geophys Res Lett 20:2263CrossRefGoogle Scholar
  15. 15.
    Dale CJ, Chen L, McNulty PJ, Marshall PW, Burke EA (1994) A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes. IEEE Trans Nucl Sci 41(6):1974–1983CrossRefGoogle Scholar
  16. 16.
    Huhtinen M, Aarnio PA (1993) Pion induced displacement damage in silicon devices. Nucl Instrum Methods Phys Res Sect A 335(3):580–582CrossRefGoogle Scholar
  17. 17.
    Akkerman A, Barak J, Chadwick MB et al (2001) Updated NIEL calculations for estimating the damage induced by particles and gamma rays in Si and GaAs. Radiat Phys Chem 62:301–331CrossRefGoogle Scholar
  18. 18.
    Summers GP, Burke EA, Shapiro P, Messenger SR, Walters RJ (1993) Damage correlations in semiconductors exposed to gamma, electron and proton radiations. IEEE Trans Nucl Sci 40(6):1372–1379CrossRefGoogle Scholar
  19. 19.
    Vasilescu A, Lindstroem G. Displacement Damage in Silicon, Online Compilation. http://sesam.desy.de/members/gunnar/Si-dfuncs.html. Accessed 15 July 2005
  20. 20.
    Walters RJ, Shaw GJ, Summers GP, Burke EA, Messenger SR (1992) Radiation effects in Ga0.47In0.53As devices. IEEE Trans Nucl Sci 39(6):2257–2264CrossRefGoogle Scholar
  21. 21.
    Fodness BC, Marshall PW, Reed RA, Jordan TM, Pickel JC, Jun I, Xapsos MA, Burke EA, Ladbury R (2003) Monte Ccarlo treatment of displacement damage in bandgap engineered HgCdTe detectors. IEEE Conf. Proc., 7th European Conference on Radiation and its Effects on Components and Systems (RADECS), pp 479–485Google Scholar
  22. 22.
    Jun I, Xapsos MA, Messenger SR, Burke EA, Walters RJ, Summers GP, Jordan T (2003) Proton nonionizing energy loss (NIEL) for device applications. IEEE Trans Nucl Sci 50(6):1924–1928Google Scholar
  23. 23.
    Jun I, Kim W, Evans R (2009) Electron nonionizing energy loss for device applications. IEEE Trans Nucl Sci 56(6):3229–3235Google Scholar
  24. 24.
    Electronic Industries Association (EIA) (1996) Test procedures for the measurement of single-event effects in semiconductor devices from heavy ion irradiation. EIA/JEDEC Standard No. 57, Arlington, EIA, VA, p 49Google Scholar
  25. 25.
    JEDEC Solid State Technology Association (2006) Measurement and reporting of alpha particle and terrestrial cosmic ray-induced soft errors in semiconductor devices. JEDEC Standard No. 89A. JEDEC Solid State Technology Association 2001 Arlington, VA, pp 2201–3834Google Scholar
  26. 26.
    Bruguier G, Palau JM (1996) Single particle-induced latchup. IEEE Trans Nucl Sci 43:522Google Scholar
  27. 27.
    Pickel JC (1996) Single-event effects rate prediction. IEEE Trans Nucl Sci 43:483Google Scholar
  28. 28.
    Dodd PE (1996) Device simulation of charge collection and single event upset. IEEE Trans Nucl Sci 43:561Google Scholar
  29. 29.
    Sexton F (2003) Destructive single-event effects in semiconductor devices and ICs. IEEE Trans Nucl Sci 50:603–621CrossRefGoogle Scholar
  30. 30.
    Schwank J, Ferlet-Cavrois V, Shaneyfelt M, Paillet P, Dodd P (2003) Radiation effects in SOI technologies. IEEE Trans Nucl Sci 50:522–538CrossRefGoogle Scholar
  31. 31.
    Pease RL, Seiler J (2005) Evaluation of MIL-STD-883/test method 1019.6 for bipolar linear circuits. J Radiat Effects Res Eng. http://focus.ti.com/pdfs/hirel/space/HEART05-G1paper.pdf. Accessed 23 Nov 2016
  32. 32.
    American Society for Testing and Materials (ASTM) F1892 Standard guide for ionizing radiation (total dose) effects testing of semiconductor. West Conshohocken, PA : ASTM, 2006, Philadelphia, p 39Google Scholar
  33. 33.
    European Space Agency/Space Components Coordination (ESA/SCC) Basic specification n. 22900. Total dose steady-state irradiation test method. Issue 3, MAR 2007Google Scholar
  34. 34.
    Electronic Industries Association (1996) Test procedures for the measurement of single-event effects in semiconductor devices from heavy ion irradiation. EIA/JEDEC Standard, No. 57, ArlingtonGoogle Scholar
  35. 35.
    European Space Agency/Space Components Coordination (ESA/SCC) (1995) Basic specification n. 25100 Single event effects test method and guidelines, 1st edn. ESAGoogle Scholar
  36. 36.
    Virtanen A, Javanainen A, Kettunen H, Pirojenko A, Riihimäki I, Ranttila K.  Radiation effects facility at JYFL. https://www.jyu.fi/fysiikka/en/research/accelerator/radef. Accessed 23 Nov 2016
  37. 37.
    Heavy ion irradiation facility (HIF). http://www.cyc.ucl.ac.be/HIF/HIF.php. Accessed 23 Nov 2016
  38. 38.
    Harboe-Sorensen R, Guerre FX, Roseng A (2005) Design, testing and calibration of a reference SEU monitor system. IEEE Conf. Proc. European Conference in radiation and its effects on components and systems. RADECS 2005, pp B3–1–B3–7Google Scholar
  39. 39.
    Harboe-Sorensen R, Poivey C, Guerre F-X, Roseng A, Lochon F, Berger G, Hajdas W, Virtanen A, Kettunen H, Duzellier S (2008) From the reference SEU monitor to the technology demonstration module on-board PROBA-II. IEEE Trans Nucl Sci 55:3082–3087CrossRefGoogle Scholar
  40. 40.
    Iles PA (2001) Evolution of space solar cells. Sol Energy Mater Sol Cells 68:1–13CrossRefGoogle Scholar
  41. 41.
    Bett AW, Dimroth F, Stollwerck G, Sulima OV (1999) III–V compounds for solar cell applications. Appl Phys A69:129–199Google Scholar
  42. 42.
    Priyanka Singh N, Ravindra M (2012) Temperature dependence of solar cell performance—an analysis. Sol Energy Mater Sol Cells 101:36–45CrossRefGoogle Scholar
  43. 43.
    Green MA, Emery K, Hishikawa Y, Warta W, Dunlop ED (2012) Solar cell efficiency tables (version 39). Prog Photovolt Res Appl 20:12–20CrossRefGoogle Scholar
  44. 44.
    Torchynska TV, Polupan GP (2002) III-V material solar cells for space application. Semiconduct Phys Quant Electron Optoelectron. 5(1):63–70Google Scholar
  45. 45.
    Li SS, Loo RY (1991) Deep-level defects and numerical simulation of radiation damage in GaAs solar cells. Solar Cells 31:349–377CrossRefGoogle Scholar
  46. 46.
    de Angelis N, Bourgoin JC, Takamoto T, Khan A, Yamaguchi M (2001) Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells. Sol Energy Mater Sol Cells 66:495–500CrossRefGoogle Scholar
  47. 47.
    Yamaguchi Masafumi (2001) Radiation-resistant solar cells for space use. Sol Energy Mater Sol Cells 68:31–53CrossRefGoogle Scholar
  48. 48.
    Danilchenko B, Budnyk A, Shpinar L, Poplavskyy D, Zelensky SE, Barnham KWJ, Ekins-Daukes NJ (2008) 1 MeV electron irradiation influence on GaAs solar cell performance. Sol Energy Mater Sol Cells 92:1336–1340CrossRefGoogle Scholar
  49. 49.
    Weinberg I (1991) Radiation damage in InP solar cells. Solar Cells 31:331–348Google Scholar
  50. 50.
    Sumita T, Imaizumi M, Matsuda S, Ohshima T, Ohi A, Itoh H (2003) Proton radiation analysis of multi-junction space solar cells. Nucl Instrum Methods Phys Res 206:448–451CrossRefGoogle Scholar
  51. 51.
    Hacke P, Uesugi M, Matsuda S (1994) A study of the relationship between junction depth and GaAs solar cell performance under a 1 MeV electron fluence. Sol Energy Mater Sol Cells 35:113–119CrossRefGoogle Scholar
  52. 52.
    Yamaguchi M (2001) Radiation-resistant solar cells for space use. Sol Energy Mater Sol Cells 31–53Google Scholar

Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  1. 1.Dipartimento di Fisica “E. Pancini”Università degli Studi di Napoli Federico IINaplesItaly

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