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Gate-Controlled Conductance in ABA-Stacked Trilayer Graphene

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Abstract

In this work, we theoretically consider the electron transport across a junction on monolayer, Bernal-stacked AB bilayer and ABA trilayer graphene. The electronic transmissions through the electrostatic barrier in trilayer and bilayer graphene are computed within the scattering matrix using Landauer–Buttiker formula. We theoretically evaluate the total conductance. We study the effect of gate potential on the band structures. Our findings show that the effect of the gate potential could open an energy gap and the charge current can be controlled by tuning the gate potential in the middle region that acts as a barrier. Trilayer graphene is chosen as better appropriate candidate for industrial applications. Our findings show that the charge current can be controlled by tuning the gate potential in the middle region trilayer graphene that acts as a barrier.

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Authors and Affiliations

  1. Department of Physic, Hamedan Branch, Islamic Azad University, Hamedan, Iran

    Nesa Ahmadzadeh

  2. Department of Physics, Faculty of Science, Lorestan University, Lorestan, Iran

    Zeinab Rashidian & Abdolrahim Baharvand

Authors
  1. Nesa Ahmadzadeh
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  2. Zeinab Rashidian
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  3. Abdolrahim Baharvand
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Correspondence to Zeinab Rashidian.

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Ahmadzadeh, N., Rashidian, Z. & Baharvand, A. Gate-Controlled Conductance in ABA-Stacked Trilayer Graphene. Iran J Sci Technol Trans Sci 43, 2657–2663 (2019). https://doi.org/10.1007/s40995-019-00716-2

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  • DOI: https://doi.org/10.1007/s40995-019-00716-2

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