摘要
二氧化硅是一种常见且非常重要的介电材料, 但是其传统的制备方法例如物理气相沉积, 化学气相沉积等无法适应大规模生产以及有机电子工业. 本论文介绍了一种简单的制备二氧化硅超薄膜的方法, 即利用紫外光辐照全氢聚硅氮烷, 使其转化为二氧化硅. 这种方法所制备的二氧化硅超薄膜具有超平的表面以及非常低的漏电. 此外, 我们还将该二氧化硅超薄膜应用于有机晶体管和反相器电路中, 这些器件均表现出良好的电学性能. 这些结果表明该方法制备的二氧化硅超薄膜具有很好的实际应用前景.
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Acknowledgements
The authors are grateful to the National Natural Science Foundation of China (21573277, 51633006 and 51503221), the National Key Research and Development Program (2016YFA0200700), the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (QYZDBSSWSLH031), and the Natural Sciences Foundation of Jiangsu Province (BK20150368).
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Zhongwu Wang is a master student in Chemistry Department, College of Science, Shanghai University, China, under the supervision of Prof. Liqiang Li and Prof. Feifei Xing. His current research interests focus on high performance organic transistor and sensors.
Liqiang Li is a professor in Advanced Nano-materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China. His research interests include low dimensional molecular materials (organic semiconductor, conjugated polymer, and nanocarbon) and multifunctional electronic devices (transistors, sensors, memories, etc.).
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Ultrathin silica film derived with ultraviolet irradiation of perhydropolysilazane for high performance and low voltage organic transistor and inverter
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Wang, Z., Guo, S., Liang, Q. et al. Ultrathin silica film derived with ultraviolet irradiation of perhydropolysilazane for high performance and low voltage organic transistor and inverter. Sci. China Mater. 61, 1237–1242 (2018). https://doi.org/10.1007/s40843-017-9216-2
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DOI: https://doi.org/10.1007/s40843-017-9216-2