Advertisement

Friction

, Volume 5, Issue 1, pp 99–107 | Cite as

Material removal mechanism of copper chemical mechanical polishing with different particle sizes based on quasi-continuum method

  • Aibin Zhu
  • Dayong He
  • Shengli He
  • Wencheng Luo
Open Access
Research Article

Abstract

In this paper, the material removal mechanism of copper chemical mechanical polishing was studied by the quasicontinuum method that integrated molecular dynamics and the finite element method. By analyzing the abrasive process of different particle sizes on single crystal copper, we investigated the internal material deformation, the formation of chips, the stress distribution, and the change of cutting force. Results showed that shear band deformation was generated along the cutting direction at approximately 45° inside the workpiece material. The deformation was accompanied by dislocations and sliding phenomena in the shear band region. Smaller abrasive particle size led to poor quality of the workpiece, while a larger particle size led to better quality. However, larger particle size resulted in greater plastic deformation and deeper residual stress inside the workpiece. Size change of abrasive particles had little effect on the tangential cutting force.

Keywords

chemical mechanical polishing material removal mechanism particle size quasi-continuum single crystal copper 

Notes

Acknowledgments

The authors greatly appreciate the financial support from National Natural Science Foundation of China (No. 51175409).

References

  1. [1]
    Steigerwald J, Murarka S, Gutmann R, Duquette D. Chemical processes in the chemical mechanical polishing of copper. Mater Chem Phys 41(3): 217–228 (1995)CrossRefGoogle Scholar
  2. [2]
    Yokosuka T, Kurokawa H, Takami S, Kubo M, Miyamoto A, Imamura A. Development of new tight-binding molecular dynamics program to simulate chemical-mechanical polishing processes. Japan J Appl Phys 41(4S): 2410 (2002)CrossRefGoogle Scholar
  3. [3]
    Ye Y, Biswas R, Bastawros A, Chandra A. Simulation of chemical mechanical planarization of copper with molecular dynamics. Appl Phys Lett 81(10): 1875–1877 (2002)CrossRefGoogle Scholar
  4. [4]
    Han X, Hu Y, Yu S. Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method. Appl Phys A 95(3): 899–905 (2009)CrossRefGoogle Scholar
  5. [5]
    Si L, Guo D, Luo J, Lu X. Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study. J Appl Phys 107(6): 064310 (2010)CrossRefGoogle Scholar
  6. [6]
    Wu L. An analytical model of contact pressure distribution caused by 3-D wafer topography in chemical-mechanical polishing processes. J Electrochem Soc 159(3): H266–H276 (2012)CrossRefGoogle Scholar
  7. [7]
    Zhou P, Guo D, Kang R, Jin Z. A mixed elastohydrodynamic lubrication model with layered elastic theory for simulation of chemical mechanical polishing. Int J Adv Manuf Technol 69(5–8): 1009–1016 (2013)CrossRefGoogle Scholar
  8. [8]
    Chen R, Jiang R, Lei H, Liang M. Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation. Appl Surf Sci 264(1): 148–156 (2013)CrossRefGoogle Scholar
  9. [9]
    Lee H, Dornfeld DA, Jeong H. Mathematical model-based evaluation methodology for environmental burden of chemical mechanical planarization process. Int J Prec Eng Manuf- Green Technol 1(1): 11–15 (2014)CrossRefGoogle Scholar
  10. [10]
    Yang Z, Xu Q, Chen L. A chemical mechanical planarization model including global pressure distribution and feature size effects. IEEE Transactions on Components Packaging & Manufacturing Technology 6(2): 177–184 (2016)CrossRefGoogle Scholar
  11. [11]
    Larsen-Basse J, Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 233: 647–654 (1999)CrossRefGoogle Scholar
  12. [12]
    Tadmor E B, Ortiz M, Phillips R. Quasicontinuum analysis of defects in solids. Philosophical Magazine A 73(6): 1529–1563 (1996)CrossRefGoogle Scholar
  13. [13]
    Miller R, Tadmor E, Phillips R, Ortiz M. Quasicontinuum simulation of fracture at the atomic scale. Modelling and Simulation in Materials Science and Engineering 6(5): 607–638 (1998)CrossRefGoogle Scholar
  14. [14]
    Shenoy V, Miller R, Tadmor E, Phillips R, Ortiz M. Quasicontinuum models of interfacial structure and deformation. Phys Rev Lett 80(4): 742–745 (1998)CrossRefGoogle Scholar
  15. [15]
    Tadmor E, Miller R, Phillips R, Ortiz M. Nanoindentation and incipient plasticity. J Mater Res 14(06): 2233–2250 (1999)CrossRefGoogle Scholar

Copyright information

© The Author(s) 2016

Open Access: The articles published in this journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors and Affiliations

  • Aibin Zhu
    • 1
  • Dayong He
    • 1
  • Shengli He
    • 1
  • Wencheng Luo
    • 1
  1. 1.Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing SystemXi’an Jiaotong UniversityXi’anChina

Personalised recommendations