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Influence of Temperature in Scattered SiNW MOSFET

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Abstract

The impact of temperature in carrier transport of scattered SiNW MOSFET has been developed. Scattered SiNW MOSFET model includes the effects of elastic scattering, optical phonon emission, surface roughness scattering and random discrete dopants. The temperature effect of above mentioned scatterings in the device limits electron mobility, decreasing device current and transconductance. This work discusses the detailed behavior of analog parameters like transconductance (gm) and early voltage (VA). The validity of the proposed model has been confirmed by comparing the analytical results with the technology computer aided design simulation results.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Mohamed Sathak Engineering College, Kilakarai, 623806, India

    I. Sheik Arafat

  2. Thiagarajar College of Engineering, Madurai, India

    N. B. Balamurugan

  3. Mohamed Sathak Engineering College, Kilakarai, India

    S. Bismillah Khan

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  1. I. Sheik Arafat
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  2. N. B. Balamurugan
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  3. S. Bismillah Khan
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Correspondence to I. Sheik Arafat.

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Sheik Arafat, I., Balamurugan, N.B. & Bismillah Khan, S. Influence of Temperature in Scattered SiNW MOSFET. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 89, 35–40 (2019). https://doi.org/10.1007/s40010-017-0385-2

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  • DOI: https://doi.org/10.1007/s40010-017-0385-2

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